EIC7179-8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 7.10-7.90 ghz 8-watt internally-matched power fet issued date: 06-22-04 features ? 7.10 ? 7.90 ghz bandwidth ? input/output impedance matched to 50 ohms ? +39.5 dbm output power at 1db compression ? 9 db power gain at 1db compression ? 30% power added efficiency ? -46 dbc im3 at po = 28.5 dbm scl ? hermetic metal flange package ? 100% tested for dc, rf, and r th description the EIC7179-8 is a high power, highly linear, single stage mfet amplifier in a flange mount package. this amplifier features excelics? unique mesfet transistor technology. caution! esd sensitive device. electrical characteristics (t a = 25 c) symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 2200ma 38.5 39.5 dbm g 1db gain at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 2200ma 7.5 8.5 db ? g gain flatness f = 7.10-7.90ghz v ds = 10 v, i dsq 2200ma 0.6 db pae power added efficiency at 1db compression v ds = 10 v, i dsq 2200ma f = 7.10-7.90ghz 30 % id 1db drain current at 1db compression f = 7.10-7.90ghz 2400 2800 ma im3 output 3rd order intermodulation distortion ? f = 10 mhz 2-tone test; pout = 28.5 dbm s.c.l 2 v ds = 10 v, i dsq 65% idss f = 7.90 ghz -43 -46 dbc i dss saturated drain current v ds = 3 v, v gs = 0 v 4000 4500 ma v p pinch-off voltage v ds = 3 v, i ds = 40 ma -2.5 -4.0 v r th thermal resistance 3 3.5 4.0 o c/w notes: 1. tested with 100 ohm gate resistor. 2. s.c.l. = single carrier level. 3. overall rth depends on case mounting.
EIC7179-8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 absolute maximum ratings for continuous operation 1,2 symbol characteristic value v ds drain to source voltage 10 v v gs gate to source voltage -4.5 v i ds drain current idss i gsf forward gate current 80 ma p in input power @ 3db compression p t total power dissipation 32 w t ch channel temperature 150c t stg storage temperature -65/+150c notes: 1. operating the device beyond any of the above ratings may result in permanent damage or reduction of mttf. 2. bias conditions must also satisfy the following equation p t < (t ch ?t pkg )/r th ; where t pkg = temperature of package, and p t = (v ds * i ds ) ? (p out ? p in ). performance data typical s-parameters (t= 25c, 50 ? system, de-embedded to edge of package) v ds = 10 v, i dsq 2200ma freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 6.25 0.880 -49.670 2.147 58. 460 0.045 1.160 0.220 -119.050 6.50 0.803 -70.860 2.561 25.780 0.061 -30.980 0.255 155.400 6.75 0.693 -96.200 2.913 -8. 850 0.078 -66.370 0.409 103.720 7.00 0.517 -126.330 3.150 -44.530 0.096 -100.870 0.533 66.370 7.25 0.330 -162.030 3.324 -79. 880 0.112 -136.570 0.576 32.440 7.50 0.165 137.750 3.420 -117.150 0.122 -173.260 0.545 -2.360 7.75 0.160 26.960 3.298 -154.880 0.129 150.260 0.470 -43.000 8.00 0.285 -38.600 3.055 167.050 0.126 113.450 0.399 -92.540 8.25 0.398 -86.640 2.676 129.920 0.115 77.180 0.413 -144.320 8.50 0.492 -128.940 2.241 93.730 0.099 43.170 0.505 173.770 8.75 0.570 -165.600 1.765 59.440 0.081 10.010 0.606 143.580 0 1.0 -1.0 1.0 10.0 - 1 0 . 0 1 0 . 0 5.0 - 5 . 0 5 . 0 2.0 - 2 . 0 2 . 0 3.0 - 3 . 0 3 . 0 4.0 - 4 . 0 4 . 0 0.2 - 0 . 2 0 . 2 0.4 - 0 . 4 0 . 4 0.6 - 0 . 6 0 . 6 0.8 - 0 . 8 0 . 8 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 and s22 swp max 8.5ghz swp min 6.5ghz s[1,1] * EIC7179-8 s[2,2] * EIC7179-8 6.5 7 7.5 8 8.5 frequency (ghz) s21 and s12 -30 -20 -10 0 10 20 s21 and s12 (db) db(|s[2,1]|) * EIC7179-8 db(|s[1,2]|) * EIC7179-8
EIC7179-8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 power de-rating curve and im3 definition power dissipation vs. temperature 0 4 8 12 16 20 24 28 32 36 0 25 50 75 100 125 150 case temperature (c) total power dissipation (w) saf e operating region potentially unsaf e operating region f1 f2 (2f1-f2) f1 f2 (2f2-f1) im3 pout pin ip 3 = pout + im3/2 third-order intercept point ip3 f1 or f2 (2f2 - f1) or (2f1 - f2) pin [s.c.l.] (dbm) pout [s.c.l.] (dbm) im3 typical power data (v ds = 10 v, i dsq = 2200 ma) typical im3 data (v ds = 10 v, i dsq 65% idss ) p-1db & g-1db vs frequency 35 36 37 38 39 40 7.0 7.2 7.4 7.6 7.8 8.0 frequency (ghz) p-1db (dbm) 8 9 10 11 12 13 g-1db (db) p-1db (dbm) g-1db (db) im3 vs output power f1 = 7.90 ghz, f2 = 7.91 ghz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 34 35 pout [s.c.l.] (dbm) im3 (dbc ) im3 (dbc)
EIC7179-8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 4 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 package outline dimensions in inches, tolerance + .005 unless otherwise specified sn excelics ym ordering information part number grade 1 f test (ghz) p 1db (min) im 3 (min) 2 EIC7179-8 industrial 7.10-7.90 ghz 38.5 -43 notes: 1. contact factory for military and hi-rel grades. 2. exact test conditions are specified in ?electrical characteristics? table. EIC7179-8 source
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